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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode powe.
• 16 A, 400 V, RDS(on) = 270 mΩ (Max) @VGS = 10 V, ID = 8.0 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
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FQP17N40 - ON Semiconductor
This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. T.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP17N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET |
|
| 2 | FQP17N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET |
|
| 3 | FQP17P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET |
|
| 4 | FQP17P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
|
| 5 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 6 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 7 | FQP10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 8 | FQP10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 9 | FQP10N20C |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FQP10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 11 | FQP10N50CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FQP10N60 |
Oucan Semi |
N-Channel MOSFET |
|