FQI7N60 - ON Semiconductor

FQI7N60 N-Channel MOSFET

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active.

Features

• 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A
• Low Gate Charge (Typ. 29 nC)
• Low Crss (Typ. 16 pF)
• 100% Avalanche Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter FQB7N60TM FQI7N60TU Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery .