Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
S
D G
G S
D-PAK
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
+ 6
6 + ;
6
;
!$
+
3-)&74
3-1
*
*74
: +
(!
;
(!
,!(!
;
= , !!$
3
-)&74>
3-)&7.
FQD7P20 - INCHANGE
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
FQD7P20 - ON Semiconductor
This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. T.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQD7P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET |
|
| 2 | FQD7N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 3 | FQD7N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET |
|
| 4 | FQD7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQD7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 6 | FQD7N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 7 | FQD10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 8 | FQD10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 9 | FQD10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 10 | FQD10N20L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 11 | FQD11P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET |
|
| 12 | FQD12N06 |
Oucan Semi |
60V N-Channel MOSFET |
|