This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active.
• 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A
• Low Gate Charge (Typ. 29 nC)
• Low Crss (Typ. 16 pF)
• 100% Avalanche Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant
MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
FQB7N60TM FQI7N60TU Unit
VDSS ID
IDM VGSS EAS
IAR EAR dv/dt
Drain−Source Voltage Drain Current − Continuous (TC = 25°C)
− Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQB7N65C |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FQB7N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
3 | FQB7N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET | |
4 | FQB7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQB7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
6 | FQB7N30 |
Fairchild Semiconductor |
300V N0Channel MOSFET | |
7 | FQB7N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
8 | FQB7N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
9 | FQB70N08 |
INCHANGE |
N-Channel MOSFET | |
10 | FQB70N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
11 | FQB70N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
12 | FQB7P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET |