These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB12P20 / FQI12P20 -200 -11.5 -7.27 -46 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/n.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQB12P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
2 | FQB12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
3 | FQB12N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
4 | FQB12N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
5 | FQB12N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
6 | FQB12N65 |
Oucan Semi |
12A N-Channel MOSFET | |
7 | FQB10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
8 | FQB10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
9 | FQB10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
10 | FQB10N50CF |
ON Semiconductor |
N-Channel MOSFET | |
11 | FQB10N50CF |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FQB10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |