These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 5.8A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-3P
FQA Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA5N90 900 5.8 3.67 23.2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA55N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
2 | FQA55N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
3 | FQA58N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
4 | FQA020ADC-007-M |
TDK-Lambda |
EMC Filters | |
5 | FQA020ADC-007-S |
TDK-Lambda |
EMC Filters | |
6 | FQA020ADC-N07-S |
TDK-Lambda |
EMC Filters | |
7 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
8 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
9 | FQA10N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
10 | FQA10N80C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET | |
11 | FQA10N80C_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET | |
12 | FQA11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |