These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
•
•
•
•
•
•
• 36A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
!
"
G! G DS
! "
" "
TO-3P
FQA Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA33N10L 100 36 25.5 144 ± 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA33N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
2 | FQA30N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
3 | FQA32N20C |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FQA34N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQA34N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
6 | FQA34N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
7 | FQA35N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
8 | FQA36P15 |
Fairchild Semiconductor |
150V P-Channel MOSFET | |
9 | FQA38N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
10 | FQA38N40 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
11 | FQA020ADC-007-M |
TDK-Lambda |
EMC Filters | |
12 | FQA020ADC-007-S |
TDK-Lambda |
EMC Filters |