FPT550 - Fairchild Semiconductor

FPT550 Hermetic TO-18 Silicon Phototransistors

FPT51 0 I FPT530 I FPT550 are nitride-passivated npn Planar silicon phototransistors. These devices are packaged in a TO-18 style, hermetically sealed package with lens cap. For most applications two pins are used (collector and emitter pins). The availability of the base pin gives wide latitude for flexible circuit design. Phototransistors can be used as ph.

Features

Tc = 25°C Derate Linearly from 25°C Total Dissipation at TA = 25°C Derate Linearly from 25°C 600mW 4.8 mW/oC 300mW 2.4 mW/oC Maximum Voltages and Currents VCB Collector-to-Base Voltage FPT510/FPT510A 60 V FPT530/FPT530A 50 V FPT550 I FPT550A 30 V VCE(sus) Collector-to-Emitter Sustaining Voltage FPT510/FPT510A 45 V FPT530/FPT530A 30V FPT550 I FPT550A 12 V IC Collector Current 50mA Package Outline .230 (5.842) !---_t-.209 (5.309) .19514.953) CIA .17814.521)-tt---I CIA k--<=qI=T==
* .030 .020 (0.508) 10.762) .21015.334) .010 (0.254) T SeatingMAL.Xi.III:;;==;;=~ .17014.31.