FPN530 - Fairchild Semiconductor

FPN530 NPN Low Saturation Transistor

FPN530 / FPN530A FPN530 FPN530A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continu.

Features

e, Junction to Case Thermal Resistance, Junction to Ambient Max FPN530 / FPN530A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN530 / FPN530A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IC = 100 µA, IE = 0 IE = 100 µA, IC = 0 VCB = 30 V, IE.