FPA105 - Fairchild Semiconductor

FPA105 Light Reflection Emitter / Sensor Array

The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are perpendicular to the face of the device; therefore, the phototransistorresponds to radiation emitted from the diode only when a reflective object or surface is.

Features

r to prevent visible light from entering the phototransistor. Reduces Mechanical Design and Packaging Problems High Sensitivity Excellent Stability Low Temperature Coefficient Absolute Maximum Ratings Maximum Temperature and Humidity Storage Temperature -40°C to +100°C Operating Temperature -40°C to +100°C Pin Temperature (Soldering, 10 s) 260°C Relative Humidity at 65°C 85% Input Diode IF Forward de Current VR Reverse Voltage Power Dissipation at = TA 25°C Derate Linearly from 25°C 75 mA 3.0 V 110 mW 1.47 mW/oC Output Transistor Ic Collector de Current VCE Collector-to-Emitter Vo.