FMMT497 - Zetex Semiconductors

FMMT497 NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR

SOT23 NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR ISSUE 3 – DECEMBER 1995 COMPLIMENTARY TYPE – PARTMARKING DETAIL – 7 FMMT597 497 FMMT497 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C.

Features

Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage 300 300 5 CONDITIONS. IC=100µA IC=10mA
* IE=100µA VCB=250V VCES=250V VEB=4V IC=100mA, IB=10mA IC=250mA, IB=25mA IC=250mA, IB=25mA IC=250mA, VCE=10V IC=1mA, VCE=10V IC=100mA, VCE=10V
* IC=250mA, VCE=10V
* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 125 FMMT497 TYPICAL CHARACTERISTICS 0.6 0.5 0.4 0.3 0.2 0.1 0 1mA 10mA 100mA 1A I+/I
*=10 I+/I
*=50 +25 ° C 0.6 0.5 0.4 0.3 0.2 0.1 0 I+/I
*=10 -55 °C +25 °C .