FMMT495 - Zetex Semiconductors

FMMT495 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – 7 495 FMMT495 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temper.

Features

100µA IC=10mA
* IE=100µA VCB=150V VCE=150V VEB=4V IC=250mA, IB=25mA
* IC=500mA, IB=50mA
* IC=500mA, IB=50mA
* IC=500mA, VCE=10V
* IC=1mA, VCE=10V IC=250mA, VCE=10V
* IC=500mA, VCE=10V
* IC=1A, VCE=10V
* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz fT Cobo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 123 FMMT495 TYPICAL CHARACTERISTICS 0.4 +25 ° C 0.4 I+/I
*=10 0.3 0.3 0.2 I+/I
*=10 I+/I
*=50 -55 ° C +25 ° C +100 ° C 0.2 0.1 0.1 0 1mA 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 320 V+-=10V +1.