FML20N50ES - Fuji Electric

FML20N50ES N-CHANNEL SILICON POWER MOSFET

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symb.

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TFP 4 0.6±0.2 Equivalent circuit schematic 9.0± 0.2 0.1 7.0± 0.2 0.4± 0.1 0.5 4 D 10.1±0.3 9.0±0.2 0.5±0.2 2.0 1.5 2.0 2.5 G 1 (10.1) (5.8) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 1 1.0±0.2 1.0±0.2 S1 2 3 S2 0.4±0.1 3.