Ultra-Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) VF (V) max per element IR (mA) IF (A) VR = VRM Electrical Characteristics (Ta = 25°C) t rr t rr IR (H) (ns) (ns) (mA) VR=VRM, Ta=100°C IF /IRP (mA) IF /IRP (mA) Others Rth ( j-c) (°C/ W) Mass Fig. (g) 50Hz With Sinewave Hea.
Forward Voltage VF (V) 2.4 0 1 5 10 Overcurrent Cycles 50 FMG-34S/R 16 Average Forward Current I F (AV) (A) Tc—IF(AV) Derating t /T = 1/2 VF —IF Characteristics (Typical) 30 I FSM (A) I FMS Rating 100 I FSM (A) 10 Forward Current IF (A) D.C. 12 t /T = 1/6 t /T= 1/ 3, Sinewave 8 80 20ms 1 Peak Forward Surge Current 60 0.1 Ta = 130ºC 100ºC 60ºC 28ºC 40 4 0.01 20 0 50 70 90 110 130 Case Temperature Tc (°C) 150 0.001 0 2.0 0.4 0.8 1.2 1.6 Forward Voltage VF (V) 2.4 0 1 5 10 Overcurrent Cycles 50 FMG-36S/R 15 Average Forward Current I F (AV) (A) Tc—IF(AV) Derating.
FMG34S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. AB.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FMG34R |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
2 | FMG34U |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
3 | FMG32R |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
4 | FMG32S |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
5 | FMG32U |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
6 | FMG33R |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
7 | FMG33S |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
8 | FMG33U |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
9 | FMG36R |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
10 | FMG36S |
INCHANGE |
Ultrafast Recovery Rectifier | |
11 | FMG36S |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode | |
12 | FMG36U |
Thinki Semiconductor |
Ultrafast Recovery Rectifier Diode |