FFB2907A / FMBT2907A / MMPQ2907A Discrete POWER & Signal Technologies FFB2907A E2 B2 C1 FMB2907A C2 E1 C1 MMPQ2907A E2 B2 E3 B3 E4 B4 E1 C2 B1 pin #1 B1 B2 E2 pin #1 B1 E1 SC70-6 Mark: .2F SuperSOT™-6 Mark: .2F SOIC-16 C1 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifi.
e consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2907A 300 2.4 415 Max FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W © 1998 Fairchild Semiconductor Corporation FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Cond.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FMB200 |
Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier | |
2 | FMB2222A |
Fairchild Semiconductor |
NPN Amplifier | |
3 | FMB2227A |
Fairchild Semiconductor |
NPN & PNP Complementary Dual Transistor | |
4 | FMB2227A |
ON Semiconductor |
PNP General-Purpose Amplifier | |
5 | FMB24L |
Sanken Electric |
Schottky Barrier Diodes | |
6 | FMB24L |
Allegro Microsystems |
Schottky Barrier Diodes | |
7 | FMB26L |
Sanken electric |
Schottky Barrier Diodes 60V | |
8 | FMB2F |
Dc Components |
SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER | |
9 | FMB2S |
Dc Components |
SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER | |
10 | FMB-22H |
Sanken electric |
Schottky Barrier Diodes 20V | |
11 | FMB-22L |
Sanken electric |
Schottky Barrier Diodes 20V | |
12 | FMB-2306 |
Sanken electric |
Schottky Diode |