The FLM5964-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-So.
• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 10.0dB (Typ.)
• High PAE: hadd = 37% (Typ.)
• Low IM3 = -46dBc@Po = 28.5dBm
• Broad Band: 5.9 to 6.4GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package DESCRIPTION The FLM5964-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C) Item Symbol Condition Drain-Source Voltage VDS G.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FLM5964-8F-001 |
SUMITOMO |
C-Band Internally Matched FET | |
2 | FLM5964-12DA |
Fujitsu |
Internally Matched Power GaAs FETs | |
3 | FLM5964-12F |
Fujitsu |
C-Band Internally Matched FET | |
4 | FLM5964-12F |
Eudyna Devices |
C-Band Internally Matched FET | |
5 | FLM5964-12F |
SUMITOMO |
C-Band Internally Matched FET | |
6 | FLM5964-12F-001 |
SUMITOMO |
C-Band Internally Matched FET | |
7 | FLM5964-18DA |
Fujitsu |
Internally Matched Power GaAs FETs | |
8 | FLM5964-18F |
Fujitsu |
C-Band Internally Matched FET | |
9 | FLM5964-18F |
Eudyna Devices |
C-Band Internally Matched FET | |
10 | FLM5964-18F |
SUMITOMO |
C-Band Internally Matched FET | |
11 | FLM5964-25DA |
Fujitsu |
Internally Matched Power GaAs FETs | |
12 | FLM5964-25F |
Fujitsu |
C-Band Internally Matched FET |