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FLM5964-8F - SUMITOMO

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FLM5964-8F C-Band Internally Matched FET

The FLM5964-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-So.

Features


• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 10.0dB (Typ.)
• High PAE: hadd = 37% (Typ.)
• Low IM3 = -46dBc@Po = 28.5dBm
• Broad Band: 5.9 to 6.4GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package DESCRIPTION The FLM5964-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C) Item Symbol Condition Drain-Source Voltage VDS G.

The same part from a different manufacturer

Datasheet FLM5964-8F - Eudyna Devices FLM5964-8F

D . The FLM5964-8F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum .

Datasheet FLM5964-8F - Fujitsu FLM5964-8F

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U.

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