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FLM5964-6F - Eudyna Devices

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FLM5964-6F C-Band Internally Matched FET

D . The FLM5964-6F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition FLM5964-6F Eudyna’s stringent Quality Assurance Progra.

Features

.c
• High Output Power: P1dB = 38.5dBm (Typ.) U
• High Gain: G1dB = 10.0dB (Typ.) 4 t
• High PAE: ηadd = 37% (Typ.) e = 27.5dBm
• Low IM3 = -46dBc@Po e
• Broad Band: 5.9h ~ 6.4GHz S
• Impedance Matched Zin/Zout = 50Ω aSealed Package t
• Hermetically a DESCRIPTION D . The FLM5964-6F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition FLM5964-6F Eudyna’s stringent .

The same part from a different manufacturer

Datasheet FLM5964-6F - Fujitsu FLM5964-6F

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U.

Datasheet FLM5964-6F - SUMITOMO FLM5964-6F

The FLM5964-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power .

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