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The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115 -6.
• High Output Power: P1dB=45.5dBm(Typ.)
• High Gain: G1dB=9.0dB(Typ.)
• High PAE: hadd=36%(Typ.)
• Broad Band: 5.9 to 6.4GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package DESCRIPTION The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115 -65 to +175 175 Limit <= 10 <= 108 >=-.
FLM5964-35F - Eudyna Devices
The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FLM5964-35DA |
Fujitsu |
Internally Matched Power GaAs FETs |
|
| 2 | FLM5964-12DA |
Fujitsu |
Internally Matched Power GaAs FETs |
|
| 3 | FLM5964-12F |
Fujitsu |
C-Band Internally Matched FET |
|
| 4 | FLM5964-12F |
Eudyna Devices |
C-Band Internally Matched FET |
|
| 5 | FLM5964-12F |
SUMITOMO |
C-Band Internally Matched FET |
|
| 6 | FLM5964-12F-001 |
SUMITOMO |
C-Band Internally Matched FET |
|
| 7 | FLM5964-18DA |
Fujitsu |
Internally Matched Power GaAs FETs |
|
| 8 | FLM5964-18F |
Fujitsu |
C-Band Internally Matched FET |
|
| 9 | FLM5964-18F |
Eudyna Devices |
C-Band Internally Matched FET |
|
| 10 | FLM5964-18F |
SUMITOMO |
C-Band Internally Matched FET |
|
| 11 | FLM5964-25DA |
Fujitsu |
Internally Matched Power GaAs FETs |
|
| 12 | FLM5964-25F |
Fujitsu |
C-Band Internally Matched FET |
|