FLM5359-4F - SUMITOMO

FLM5359-4F C-Band Internally Matched FET

The FLM5359-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate.

Features

• High Output Power: P1dB = 36.5dBm (Typ.)
• High Gain: G1dB = 10.5dB (Typ.)
• High PAE: hadd = 37% (Typ.)
• Low IM3 = -46dBc@Po = 25.5dBm
• Broad Band: 5.3 to 5.9GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package DESCRIPTION The FLM5359-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VD.