FLM3135-8F - Sumitomo

FLM3135-8F C-Band Internally Matched FET

The FLM3135-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate.

Features

• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 11.0dB (Typ.)
• High PAE: hadd = 37% (Typ.)
• Low IM3 = -45dBc@Po = 28.5dBm
• Broad Band: 3.1 to 3.5GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package DESCRIPTION The FLM3135-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VD.