FKN2L60 FKN2L60 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 3 1: T1 2: Gate 3: T2 2 TO-92 1 2 3 1 Bi-Directional Triode Thyristor Planar Silicon Absolute Maxim.
s A/µs W W V A °C °C Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Thermal Characteristic Symbol Rth(J-C) Parameter Thermal Resistance Test Condition Junction to case (Note 4) Min. Typ. Max. 40 Units °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 FKN2L60 Electrical Characteristics TC=25°C unless otherwise noted Symbol IDRM VTM Parameter Repetieive Peak Off-State Current On-State Voltage I VGT Gate Trigger Voltage (Note 2) II III I IGT VGD IH IL dv/dt (dv/dt)C Gate Trigger Current (Note 2) Gate Non-Trigger Voltage Ho.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FKN200 |
YAGEO |
Wirewound Resistors | |
2 | FKN2510 |
FETek |
N-Channel MOSFET | |
3 | FKN2544 |
FETek |
N-Channel MOSFET | |
4 | FKN2601 |
FETek |
P-Channel MOSFET | |
5 | FKN2607 |
FETek |
P-Channel MOSFET | |
6 | FKN2609 |
FETek |
P-Channel MOSFET | |
7 | FKN2611 |
FETek |
P-Channel MOSFET | |
8 | FKN2643 |
FETek |
P-Channel MOSFET | |
9 | FKN2WS |
YAGEO |
Wirewound Resistors | |
10 | FKN-50 |
YAGEO |
Wirewound Resistors | |
11 | FKN0008 |
FETek |
N-Channel MOSFET | |
12 | FKN0014 |
FETek |
N-Channel MOSFET |