FK14KM-10 - Mitsubishi Electric Semiconductor

FK14KM-10 HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FK14KM-10 HIGH-SPEED SWITCHING USE FK14KM-10 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAIN e SOURCE 1 2 3 2.6 ± 0.2 w ¡VDSS .......

Features

ource current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 500 ±30 14 42 14 42 40
  –55 ~ +150
  –55 ~ +150 Unit V V A A A A W °C °C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FK14KM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = .