FJPF5021 - Fairchild Semiconductor

FJPF5021 NPN Silicon Transistor

FJPF5021 FJPF5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs(Typ.) • Wide SOA 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Col.

Features

rent Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.6A VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL = 50Ω Min. 800 500 7 500 15 8 Typ. 80 15 0.1 Max. Units V V V V 10 µA 10 µA 50 1 V 1.5 V pF MHz 0.5 µs 3 µs 0.3 µs hFE Classification Classification hFE1 R 15 ~ 30 O 20 ~ 40 Y .