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Ordering number:ENN6217 NPN Epitaxial Planar Silicon Composite Transistor FH103 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features · Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. · The FH103 is formed with two chips, being equivalent to the 2SC4867, .
· Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly.
· The FH103 is formed with two chips, being equivalent to the 2SC4867, placed in one package.
· Excellent in thermal equilibrium and pair capability. Electrical Connection
B1 B2 E2
1 2 0.65 2.0 3
0.2 0.425
Package Dimensions
unit:mm 2149
[FH103]
0.425
0.15
6
5
4
1.25 2.1
0 to 0.1
C1
E1
C2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Diss.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FH101 |
WJ Communications |
High Dynamic Range FET |
|
| 2 | FH101 |
TriQuint Semiconductor |
GaAs MESFET |
|
| 3 | FH101-G |
TriQuint Semiconductor |
High Dynamic Range FET |
|
| 4 | FH1011 |
Stanley |
LED |
|
| 5 | FH102 |
Sanyo Semicon Device |
High-Frequency Low-Noise Amp/ Differential Amp Applications |
|
| 6 | FH102A |
ON Semiconductor |
RF Transistor |
|
| 7 | FH104 |
Sanyo Semicon Device |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications |
|
| 8 | FH105 |
Sanyo Semicon Device |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications |
|
| 9 | FH105A |
ON Semiconductor |
RF Transistor |
|
| 10 | FH1 |
WJ Communication |
High Dynamic Range FET |
|
| 11 | FH1100 |
Advanced Semiconductor |
SILICON DIODE |
|
| 12 | FH1117S |
Fenghua Advanced Technology |
1A Low Dropout Positive Regulator |
|