Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Opera.
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 75 A
• 100% of the Parts Tested for ILM
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
DATA SHEET www.onsemi.com
VCES 650 V
C
IC 75 A
E1: Kelvin Emitter E2: Power Emitter G
E1
E2
C E2E1G TO−247−4LD CASE 340CJ
MARKING DIAGRAM
$Y&Z&3&K FGH75T65 SQDTL4
$Y
= onsemi Logo
&Z
=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FGH75T65SQDT |
ON Semiconductor |
IGBT | |
2 | FGH75T65SQD |
ON Semiconductor |
IGBT | |
3 | FGH75T65SQDNL4 |
ON Semiconductor |
IGBT | |
4 | FGH75T65SHD |
ON Semiconductor |
IGBT | |
5 | FGH75T65SHDT |
ON Semiconductor |
IGBT | |
6 | FGH75T65SHDTL4 |
ON Semiconductor |
IGBT | |
7 | FGH75T65SHDTLN4 |
ON Semiconductor |
IGBT | |
8 | FGH75T65UPD |
Fairchild Semiconductor |
75A Field Stop Trench IGBT | |
9 | FGH75T65UPD |
ON Semiconductor |
IGBT | |
10 | FGH75T65UPD-F155 |
ON Semiconductor |
IGBT | |
11 | FGH75N60SF |
Fairchild Semiconductor |
75A Field Stop IGBT | |
12 | FGH75N60SFTU |
Fairchild Semiconductor |
75A Field Stop IGBT |