FGH40T65SPD-F085 - ON Semiconductor

FGH40T65SPD-F085 IGBT

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outsta.

Features

• Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A
• 100% Of The Part Are Dynamically Tested (Note 1)
• Short Circuit Ruggedness > 5 mS @ 25°C
• Maximum Junction Temperature: TJ = 175°C
• Fast Switching
• Tight Parameter Distribution
• Positive Temperature Co−efficient for Easy Parallel Operating
• Co−Packed With Soft And Fast Recovery Diode
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant Applications
• On−board Charger
• Air Conditioner Compressor
• PTC Heater
• Motor Drivers
• Other Automotive Power−Train Applications www.onsemi.com VCES 650.