FGH40N60SMD-F085 - ON Semiconductor

FGH40N60SMD-F085 IGBT

Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High C.

Features

• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Tightened Parameter Distribution
• AEC Qualified and PPAP Capable IGBT: AEC−Q101
• This Device is Pb−Free and is RoHS Compliant Applications
• Automotive Chargers, Converters, High Voltage Auxiliaries
• Inverters, SMPS, PFC, UPS ABSOLUTE MAXIMUM RATINGS Rating Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Collector Current @ TC = 25°C @ TC = 100.