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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.
• Max Junction Temperature 175°C
• Avalanche Rated 240 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
DATA SHEET www.onsemi.com
2. Cathode 3. Anode 1. No Connection Schottky Diode
1 23 TO−247−3LD LONG LEAD CASE 340CX
MARKING DIAGRAM
AYWWZZ FFSH 5065A
A YWW ZZ FFSH5065A
= Assembly Plant Code = Date Code (Year & Week) = Lot Code = Specific Device Cod.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSH5065B-F085 |
ON Semiconductor |
SiC Schottky Diode |
|
| 2 | FFSH10120A |
ON Semiconductor |
SiC Schottky Diode |
|
| 3 | FFSH15120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 4 | FFSH1665A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 5 | FFSH20120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 6 | FFSH20120A-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 7 | FFSH30120A-F155 |
ON Semiconductor |
SiC Schottky Diode |
|
| 8 | FFSH3065B |
ON Semiconductor |
SiC Schottky Diode |
|
| 9 | FFSB0665A |
ON Semiconductor |
SiC Schottky Diode |
|
| 10 | FFSB0665B |
ON Semiconductor |
SiC Schottky Diode |
|
| 11 | FFSB0665B-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSB0865B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|