FF150R12KT3G - Infineon

FF150R12KT3G IGBT

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF150R12KT3G 62mmC-SerienModulmitschnellemTrench/FeldstopIGBT3undEmitterControlledHighEfficiencyDiode 62mmC-seriesmodulewiththefasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/Maxi.

Features

IC = 150 A, VGE = 15 V IC = 150 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 6,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE.