These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
• RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 22nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDPF12N50FT |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDPF12N50NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDPF12N50NZ |
INCHANGE |
N-Channel MOSFET | |
4 | FDPF12N50T |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDPF12N50UT |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDPF12N35 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDPF12N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDPF10N50FT |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDPF10N50UT |
Fairchild Semiconductor |
N-Channel UniFET Ultra FRFET MOSFET | |
10 | FDPF10N60NZ |
Fairchild Semiconductor |
N-Channel UniFET II MOSFET | |
11 | FDPF10N60ZUT |
Fairchild Semiconductor |
N-Channel UniFET Ultra FRFET MOSFET | |
12 | FDPF13N50FT |
Fairchild Semiconductor |
MOSFET |