FDPF041N06BL1-F154 - ON Semiconductor

FDPF041N06BL1-F154 N-Channel MOSFET

This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables High.

Features

• RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A
• Low FOM RDS(on)
*QG
• Low Reverse Recovery Charge, Qrr
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Renewable System www.onsemi.com VDSS 60 V RDS(ON) MAX 4.1 mW @ 10 V ID MAX 77 A D G S MOSFET GDS TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM .