FDP4D5N10C - ON Semiconductor

FDP4D5N10C N-Channel MOSFET

This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. TO−220 CASE 221A TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT D G Features • Ma.

Features

• Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A
• Extremely Low Reverse Recovery Charge, Qrr
• 100% UIL Tested
• This Device is Pb−Free Halide, Free and RoHS Compliant. Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter S MARKING DIAGRAM FDPF 5N10C AYWWZZ FDPF4D5N10C, FQD45N10C = Specific Device Code A = Assembly Location YWW = Date Code (Year and Week) ZZ = Assembly Lot Code ORDERING INFORMATION Device FDPF4D5N10C FDP4D5N10C Package TO−220F (Pb−Free) TO−220 (Pb−Free) Shipping† 1000 Unit.