FDP2D9N12C - ON Semiconductor

FDP2D9N12C N-Channel MOSFET

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mW, 181 A FDP2D9N12C Features • Shielded Gate MOSFET Technology • Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A • 50% Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • 100% UIL Tested • These Devices are Pb−Free, Halogen−Free and are RoHS Compliant Typical Applications • Synchro.

Features

• Shielded Gate MOSFET Technology
• Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A
• 50% Lower Qrr than Other MOSFET Suppliers
• Lowers Switching Noise/EMI
• 100% UIL Tested
• These Devices are Pb−Free, Halogen−Free and are RoHS Compliant Typical Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 120 V Gate−to−Source Voltage VGS ±20 V Continuous Drain ID Current RqJC (Note 2) Stea.