FDP2570 - Fairchild Semiconductor

FDP2570 150V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result .

Features

• 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
• Low gate charge (40nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings 150 ± 20 (Note 1) (Note 1) Units V V A A W W°/C °C 22 50 93 0.63
  –65 to +175 Total Power Dissipation @ TC = 25°.