FDMS7672AS - Fairchild Semiconductor

FDMS7672AS N-Channel MOSFET

„ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7672AS has been designed to minimize losses in power conversion application. Advan.

Features

General Description „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky bo.