FDMS1D2N03DSD - ON Semiconductor

FDMS1D2N03DSD Dual N-Channel MOSFETs

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency. Features Q1: N-Channel • Max RDS(on) = 3.25 mW at VGS = 10 V,.

Features

Q1: N-Channel
• Max RDS(on) = 3.25 mW at VGS = 10 V, ID = 19 A
• Max RDS(on) = 4 mW at VGS = 4.5 V, ID = 17 A Q2: N-Channel
• Max RDS(on) = 0.97 mW at VGS = 10 V, ID = 37 A
• Max RDS(on) = 1.25 mW at VGS = 4.5 V, ID = 34 A
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
• MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
• RoHS Compliant Applications
• Computing
• Communications
• General Purpose Point of Load www.onsemi.com ELECTRICAL CONNECTION N-Channel MOSFET PIN1 Top View Bottom View Powe.