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Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Applications RoHS Compliant Active bridge Diode Bridge replace.
General Description Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Applications RoHS Compliant Active bridge Diode Bridge replacement in 24V & 48V AC systems Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 G1 D1/D4 S1/D2 G2 S2 MLP 4.5x5 S2 Q1 Q4 Q2 Q3 G4 D1/D4 D3/S4 G3 S3 S3 MOSFET Maximum Ratings TA.
FDMQ86530L - ON Semiconductor
This Quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Features • Max RDS(on) =.
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|---|---|---|---|---|
| 1 | FDMQ8203 |
Fairchild Semiconductor |
Dual N-Channel and Dual P-Channel PowerTrench MOSFET |
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| 2 | FDMQ8203 |
ON Semiconductor |
Dual N-Channel and Dual P-Channel Power MOSFET |
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| 3 | FDMQ8205 |
Fairchild Semiconductor |
2 Series of High-Efficiency Bridge Rectifiers |
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| 4 | FDMQ8205 |
ON Semiconductor |
High-Efficiency Bridge Rectifiers |
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| 5 | FDMQ8205A |
ON Semiconductor |
High-Efficiency Bridge Rectifiers |
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| 6 | FDMQ8205A |
Fairchild Semiconductor |
High-Efficiency Bridge Rectifiers |
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| 7 | FDMQ8403 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
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| 8 | FDMQ8403 |
ON Semiconductor |
N-Channel MOSFET |
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| 9 | FDM-2B |
ETC |
FDM-2B |
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| 10 | FDM100-0045SP |
IXYS Corporation |
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| 11 | FDM21-05QC |
IXYS Corporation |
Q-Class Power MOSFETs |
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| 12 | FDM2452NZ |
Fairchild Semiconductor |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
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