Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Q1: N-Channel Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID.
General Description Q1: N-Channel Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It f.
FDME1034CZT - ON Semiconductor
This device is designed specifically as a single package solution for a DC−DC ‘Switching’ MOSFET in cellular handset and.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDME1023PZT |
Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET |
|
| 2 | FDME1023PZT |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 3 | FDME1024NZT |
Fairchild Semiconductor |
Dual N-Channel Power Trench MOSFET |
|
| 4 | FDME1024NZT |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 5 | FDME410NZT |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDME430NT |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 7 | FDME510PZT |
Fairchild Semiconductor |
MOSFET |
|
| 8 | FDME510PZT |
ON Semiconductor |
P-Channel MOSFET |
|
| 9 | FDME820NZT |
Fairchild Semiconductor |
MOSFET |
|
| 10 | FDME820NZT |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | FDME905PT |
Fairchild Semiconductor |
MOSFET |
|
| 12 | FDME905PT |
ON Semiconductor |
P-Channel MOSFET |
|