FDMA8878-F130 - ON Semiconductor

FDMA8878-F130 N-Channel MOSFET

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance. Features • Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A • Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A • High Performance Trench Technology for Extremely Low RDS(on) • Fast Switching Speed • Pb−Free, Halide Free and RoHS .

Features

• Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A
• Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A
• High Performance Trench Technology for Extremely Low RDS(on)
• Fast Switching Speed
• Pb−Free, Halide Free and RoHS Compliant Applications
• DC−DC Buck Converters
• Load Switch in NB
• Notebook Battery Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage (Note 3) ID Drain Current Continuous (Package Limited), TC = 25°C Continuous, TA = 25°C (Note 1a) Pulsed 30 V ±20 V A 10 9.0.