FDLL4150 - Fairchild Semiconductor

FDLL4150 High Conductance Ultra Fast Diode

1N4150 / FDLL4150 Discrete POWER & Signal Technologies 1N4150 / FDLL4150 COLOR BAND MARKING DEVICE FDLL4150 1ST BAND 2ND BAND BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute M.

Features

imits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max 1N / FDLL 4150 500 3.33 300 Units mW mW/°C °C/W ã 1997 Fairchild Semiconductor Corporation 1N4150 / FDLL4150 High Conductance Ultra Fast Diode (continued) Electrical Characteristics Symbol BV IR VF TA = 25°C unless otherwise noted Parameter Breakdown Voltage Reverse Current Forward Voltage Test Conditions IR = .