FDD7N20 - Fairchild Semiconductor

FDD7N20 MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

Features

• RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A
• Low gate charge( Typ. 5nC )
• Low Crss ( Typ. 5pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant April 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for h.