FDA15N65 - Fairchild Semiconductor

FDA15N65 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

• 16A, 650V, RDS(on) = 0.44Ω @VGS = 10 V
• Low gate charge ( typical 48.5 nC)
• Low Crss ( typical 23.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability January 2007 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switc.