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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF400N80ZCN ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.4Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC-DC Power Supply ·LED Lighting ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.
· Drain-source on-resistance:
RDS(on) ≤ 0.4Ω@10V
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·AC-DC Power Supply
·LED Lighting
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
14
IDM
Drain Current-Single Pulsed
33
PD
Total Dissipation @TC=25℃
36
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCPF400N80Z |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FCPF400N80ZL1 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FCPF400N80ZL1-F154 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FCPF400N60 |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FCPF400N60 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | FCPF4300N80Z |
Fairchild Semiconductor |
MOSFET |
|
| 7 | FCPF067N65S3 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 8 | FCPF067N65S3 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 9 | FCPF067N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FCPF099N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | FCPF099N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | FCPF11N60 |
Fairchild Semiconductor |
SuperFET MOSFET |
|