FCPF190N60-F154 - ON Semiconductor

FCPF190N60-F154 N-Channel MOSFET

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanch.

Features

• 650 V @ TJ = 150°C
• Typ. RDS(on) = 170 mW
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 160 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
• Lighting / Charger / Adapter www.onsemi.com VDSS 600 V RDS(ON) MAX 199 mW @ 10 V ID MAX 20.2 A D G S MOSFET GDS TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 190N60 © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev.