The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET.
• RDS(on) = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A
• Ultra Low Gate Charge (Typ. Qg = 40.2 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• LCD/LED/PDP TV
• Lighting
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switch.
isc N-Channel MOSFET Transistor FCPF16N60NT ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input res.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FCPF16N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FCPF16N60 |
INCHANGE |
N-Channel MOSFET | |
3 | FCPF165N65S3L1 |
INCHANGE |
N-Channel MOSFET | |
4 | FCPF165N65S3L1 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FCPF165N65S3R0L |
ON Semiconductor |
N-Channel MOSFET | |
6 | FCPF11N60 |
Fairchild Semiconductor |
SuperFET MOSFET | |
7 | FCPF11N60F |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
8 | FCPF11N60NT |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FCPF11N60NT |
INCHANGE |
N-Channel MOSFET | |
10 | FCPF11N60T |
Fairchild Semiconductor |
SuperFET | |
11 | FCPF125N65S3 |
INCHANGE |
N-Channel MOSFET | |
12 | FCPF125N65S3 |
ON Semiconductor |
N-Channel MOSFET |