The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MO.
• RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
• Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
TM SupreMOS
August 2009
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC S.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Sta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FCPF1300N80Z |
Fairchild Semiconductor |
MOSFET | |
2 | FCPF1300N80Z |
INCHANGE |
N-Channel MOSFET | |
3 | FCPF11N60 |
Fairchild Semiconductor |
SuperFET MOSFET | |
4 | FCPF11N60F |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
5 | FCPF11N60NT |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FCPF11N60NT |
INCHANGE |
N-Channel MOSFET | |
7 | FCPF11N60T |
Fairchild Semiconductor |
SuperFET | |
8 | FCPF125N65S3 |
INCHANGE |
N-Channel MOSFET | |
9 | FCPF125N65S3 |
ON Semiconductor |
N-Channel MOSFET | |
10 | FCPF150N65F |
INCHANGE |
N-Channel MOSFET | |
11 | FCPF150N65FL1 |
Fairchild Semiconductor |
MOSFET | |
12 | FCPF165N65S3L1 |
INCHANGE |
N-Channel MOSFET |