FCP165N65S3 - ON Semiconductor

FCP165N65S3 N-Channel MOSFET

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequ.

Features

• 700 V @ TJ = 150°C
• Typ. RDS(on) = 140 mW
• Ultra Low Gate Charge (Typ. Qg = 39 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
• Lighting / Charger / Adapter www.onsemi.com VDSS 650 V RDS(ON) MAX 165 mW @ 10 V ID MAX 19 A D G S POWER MOSFET GD S TO−220 CASE 340AT MARKING DIAGRAM $Y&Z&3&K FCP 165N65S3 © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 4 $Y &Z &3.