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The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MO.
• RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
• Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
TM SupreMOS
August 2009
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC S.
FCP13N60N - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Stan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCP130N60 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FCP130N60 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | FCP104N60 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FCP104N60F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FCP104N60F |
INCHANGE |
N-Channel MOSFET |
|
| 6 | FCP110N65F |
Fairchild Semiconductor |
MOSFET |
|
| 7 | FCP11N60 |
Fairchild Semiconductor |
SuperFET MOSFET |
|
| 8 | FCP11N60F |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 9 | FCP11N60N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 10 | FCP11N60N |
INCHANGE |
N-Channel MOSFET |
|
| 11 | FCP125N60E |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FCP125N60E |
INCHANGE |
N-Channel MOSFET |
|