SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Conseque.
• 700 V @ TJ = 150 °C
• Typ RDS(on) = 210 mW
• Ultra Low Gate Charge (Typ. Qg = 24 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
• Lighting / Charger / Adapter
www.onsemi.com
VDSS 650 V
RDS(ON) MAX 250 mW @ 10 V
D
ID MAX 12 A
G S1
S1: Driver Source S2: Power Source S2
POWER MOSFET
S2 S2 S1 G
PQFN4 8X8 2P CASE 483AP
MARKING DIAGRAM
$Y&Z&3&K FCMT 250N65S3
$Y &Z &3 &K FCMT250N65S3
= ON Semiconductor Logo =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FCMT299N60 |
Fairchild Semiconductor |
N-Channel SuperFET II MOSFET | |
2 | FCMT099N65S3 |
ON Semiconductor |
N-Channel MOSFET | |
3 | FCMT125N65S3 |
ON Semiconductor |
N-Channel MOSFET | |
4 | FCMT180N65S3 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FCMT199N60 |
Fairchild Semiconductor |
N-Channel SuperFET II MOSFET | |
6 | FCM-1F108S-FLX01-01 |
Flextronics |
1.3 Mega Pixel 1280 x 1024 | |
7 | FCM-20B061N |
ETC |
Data Travo Flyback | |
8 | FCM-21A004 |
ETC |
Data Travo Flyback | |
9 | FCM-2F100S-FLX01-01 |
Flextronics |
2 Mega Pixel 1600 x 1200 | |
10 | FCM-3F109S-FLX01-01 |
Flextronics |
3 Mega Pixel 2048 x 1536 | |
11 | FCM-5F100S-FLX01-01 |
Flextronics |
5 Mega Pixel 2560 x 1920 | |
12 | FCM-VF108S-FLX01-01 |
Flextronics |
VGA 640 x 480 |