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The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MO.
• 650V @TJ = 150 C
• RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A
• Ultra Low Gate Charge ( Typ.Qg =115nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
o
December 2011
TM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industr.
FCH47N60N - ON Semiconductor
The SUPREMOS MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a dee.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FCH47N60 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FCH47N60 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FCH47N60F |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 4 | FCH47N60F |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FCH47N60F-F085 |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FCH47N60NF |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FCH47N60NF |
Fairchild Semiconductor |
MOSFET |
|
| 8 | FCH023N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FCH040N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FCH040N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | FCH041N60E |
Fairchild Semiconductor |
MOSFET |
|
| 12 | FCH041N60E |
ON Semiconductor |
N-Channel MOSFET |
|